In a leap forward for telecommunications technology, researchers from the Universitat Autònoma de Barcelona (UAB) have collaborated on the development of a groundbreaking switch capable of operating at unprecedented frequencies, essential for the future of 6G communication systems.
Published in Nature Electronics, the study introduces a non-volatile switch based on Hexagonal Boron Nitride (hBN), promising higher performance and energy efficiency compared to current silicon-based technologies.
Traditionally, switches in electronic communication devices are vital for controlling signals, allowing them to pass (ON state) or block them (OFF state). Current silicon-based switches, known as RF silicon-on-insulator MOSFET switches, operate at frequencies up to tens of gigahertz (GHz) but require a constant power supply to maintain their ON state.
This limitation becomes increasingly pressing with the growing demand for faster communication speeds driven by advancements in IoT and virtual reality technologies.
The newly developed switch by the UAB-led team offers a solution by leveraging hBN, a non-volatile material that changes its ON or OFF state with an electrical voltage pulse rather than a continuous signal. This innovation not only achieves operational frequencies up to 120 GHz—double that of current silicon-based devices—but also significantly reduces energy consumption.
Jordi Verdú, a researcher from the UAB Department of Telecommunications and Systems Engineering, highlighted the significance of their achievement: “For the first time, we have demonstrated the operation of a switch based on hBN at frequencies up to 120 GHz. This breakthrough opens doors for its integration into 6G mass communication systems, where high-performance and energy-efficient devices are crucial.”
Central to the switch’s operation is memristance, a property where the electrical resistance of a material changes in response to applied voltage. Previous experimental switches based on memristors achieved high frequencies but lacked practicality due to limited operational cycles.
The new hBN-based switch overcomes this challenge by arranging hBN layers in a superposition, enabling stability for up to 2000 cycles at frequencies reaching 260 GHz—making it viable for real-world applications.
The research, coordinated by King Abdullah University of Science and Technology (KAUST) in Saudi Arabia, also involved collaborators from the University of Texas at Austin, Tyndall National Institute, and University College Cork. This international effort underscores the global push towards advancing telecommunications infrastructure to meet the demands of future technologies.
Verdú concluded, “This development not only enhances device performance but also contributes to a more sustainable technology landscape by reducing energy consumption.” As telecommunications continue to evolve towards higher speeds and efficiency, innovations like the hBN-based switch represent critical steps forward in shaping the digital future.
This research marks a significant milestone in the ongoing quest for faster, more reliable communication technologies, setting the stage for the next generation of global connectivity.
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